Invention Application
- Patent Title: Method of Forming a Field Effect Transistor Having Source/Drain Material Over Insulative Material
- Patent Title (中): 形成具有绝缘材料源/漏材料的场效应晶体管的方法
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Application No.: US13861082Application Date: 2013-04-11
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Publication No.: US20130230959A1Publication Date: 2013-09-05
- Inventor: Sanh D. Tang , Michael P. Violette , Robert Burke
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.
Public/Granted literature
- US08802520B2 Method of forming a field effect transistor having source/drain material over insulative material Public/Granted day:2014-08-12
Information query
IPC分类:
