发明申请
- 专利标题: Image Sensor Isolation Region and Method of Forming the Same
- 专利标题(中): 图像传感器隔离区域及其形成方法
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申请号: US13415546申请日: 2012-03-08
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公开(公告)号: US20130234202A1公开(公告)日: 2013-09-12
- 发明人: Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
- 申请人: Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L31/109
- IPC分类号: H01L31/109 ; H01L31/18
摘要:
Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.