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    Image Sensor Isolation Region and Method of Forming the Same
    2.
    发明申请
    Image Sensor Isolation Region and Method of Forming the Same 有权
    图像传感器隔离区域及其形成方法

    公开(公告)号：US20130234202A1

    公开(公告)日：2013-09-12

    申请号：US13415546

    申请日：2012-03-08

    申请人： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Szu-An Wu

    发明人： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Szu-An Wu

    IPC分类号： H01L31/109 ,  H01L31/18

    CPC分类号： H01L27/1463 ,  H01L27/1464

    摘要： Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.

    摘要翻译： 公开了包括根据实施例的隔离区域的图像传感器，以及形成具有隔离区域的图像传感器的方法。 实施例是包括半导体衬底，半导体衬底中的光电元件和半导体衬底中的隔离区域的结构。 隔离区域靠近光电元件并且包括电介质材料和外延区域。 外延区域设置在半导体衬底和电介质材料之间。

    System and method for reducing irregularities on the surface of a backside illuminated photodiode
    3.
    发明授权
    System and method for reducing irregularities on the surface of a backside illuminated photodiode 有权
    用于减少背面照射光电二极管表面的凹凸的系统和方法

    公开(公告)号：US09349902B2

    公开(公告)日：2016-05-24

    申请号：US13486833

    申请日：2012-06-01

    申请人： Shiu-Ko JangJian ,  Kei-Wei Chen ,  Chi-Cherng Jeng ,  Min Hao Hong

    发明人： Shiu-Ko JangJian ,  Kei-Wei Chen ,  Chi-Cherng Jeng ,  Min Hao Hong

    IPC分类号： H01L31/00 ,  H01L31/103 ,  H01L29/36 ,  H01L31/18

    CPC分类号： H01L31/103 ,  H01L29/36 ,  H01L31/1037 ,  H01L31/18 ,  H01L31/1812 ,  Y02E10/50

    摘要： System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device. A doped layer may optionally be created at a depth of less than about 10 nanometers below the surface of the substrate and may be doped with a boron concentration between about 1E13 and 1E16. An oxide may be created on the substrate using a temperature sufficient to reduce the surface roughness below a predetermined roughness threshold, and optionally at a temperature between about 300° C. and 500° C. and a thickness between about 1 nanometer and about 10 nanometers. A dielectric may then be created on the oxide, the dielectric having a refractive index greater than a predetermined refractive threshold, optionally at least about 2.0.

    摘要翻译： 用于处理半导体器件表面以减少暗电流和白色像素异常的系统和方法。 一个实施例包括应用于与光敏区域相邻的半导体或光电二极管器件表面的方法，以及与该器件的电路结构相反的一侧。 掺杂层可以任选地在衬底表面下方小于约10纳米的深度处产生，并且可以掺杂在约1E13和1E16之间的硼浓度。 可以使用足以将表面粗糙度降低到预定粗糙度阈值以下且可选地在约300℃至500℃之间的温度和约1纳米至约10纳米的厚度的温度在基底上产生氧化物 。 然后可以在氧化物上产生电介质，电介质具有大于预定折射阈值的折射率，任选至少约2.0。

    Method and apparatus for backside illumination sensor
    5.
    发明授权
    Method and apparatus for backside illumination sensor 有权
    背面照明传感器的方法和装置

    公开(公告)号：US08772899B2

    公开(公告)日：2014-07-08

    申请号：US13409924

    申请日：2012-03-01

    申请人： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Ying-Lang Wang

    发明人： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Ying-Lang Wang

    IPC分类号： H01L31/00 ,  H01L31/02

    CPC分类号： H01L27/1464 ,  H01L27/14687

    摘要： Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.

    摘要翻译： 公开了用于背面照明（BSI）图像传感器装置的方法和装置。 在包括感光二极管的基板上形成BSI传感器装置。 衬底可以在背面变薄，则可以在衬底的背面上形成B掺杂的Epi-Si（Ge）层。 另外的层可以形成在B掺杂的Epi-Si（Ge）层上，例如金属屏蔽层，电介质层，微透镜和滤色器。

    System and Method for Processing a Backside Illuminated Photodiode
    6.
    发明申请
    System and Method for Processing a Backside Illuminated Photodiode 有权
    用于处理背面照明光电二极管的系统和方法

    公开(公告)号：US20130320478A1

    公开(公告)日：2013-12-05

    申请号：US13486833

    申请日：2012-06-01

    申请人： Shiu-Ko JangJian ,  Kei-Wei Chen ,  Chi-Cherng Jeng ,  Min Hao Hong

    发明人： Shiu-Ko JangJian ,  Kei-Wei Chen ,  Chi-Cherng Jeng ,  Min Hao Hong

    IPC分类号： H01L31/103 ,  H01L29/36 ,  H01L31/18

    CPC分类号： H01L31/103 ,  H01L29/36 ,  H01L31/1037 ,  H01L31/18 ,  H01L31/1812 ,  Y02E10/50

    摘要： System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device. A doped layer may optionally be created at a depth of less than about 10 nanometers below the surface of the substrate and may be doped with a boron concentration between about 1E13 and 1E16. An oxide may be created on the substrate using a temperature sufficient to reduce the surface roughness below a predetermined roughness threshold, and optionally at a temperature between about 300° C. and 500° C. and a thickness between about 1 nanometer and about 10 nanometers. A dielectric may then be created on the oxide, the dielectric having a refractive index greater than a predetermined refractive threshold, optionally at least about 2.0.

    摘要翻译： 用于处理半导体器件表面以减少暗电流和白色像素异常的系统和方法。 一个实施例包括应用于与光敏区域相邻的半导体或光电二极管器件表面的方法，以及与该器件的电路结构相反的一侧。 掺杂层可以任选地在衬底表面下方小于约10纳米的深度处产生，并且可以掺杂在约1E13和1E16之间的硼浓度。 可以使用足以将表面粗糙度降低到预定粗糙度阈值以下且可选地在约300℃至500℃之间的温度和约1纳米至约10纳米的厚度的温度在基底上产生氧化物 。 然后可以在氧化物上产生电介质，电介质具有大于预定折射阈值的折射率，任选至少约2.0。

    Method and Apparatus for Backside Illumination Sensor
    8.
    发明申请
    Method and Apparatus for Backside Illumination Sensor 有权
    背面照明传感器的方法和装置

    公开(公告)号：US20130228886A1

    公开(公告)日：2013-09-05

    申请号：US13409924

    申请日：2012-03-01

    申请人： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Ying-Lang Wang

    发明人： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Ying-Lang Wang

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L27/1464 ,  H01L27/14687

    摘要： Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.

    摘要翻译： 公开了用于背面照明（BSI）图像传感器装置的方法和装置。 在包括感光二极管的基板上形成BSI传感器装置。 衬底可以在背面变薄，则可以在衬底的背面上形成B掺杂的Epi-Si（Ge）层。 另外的层可以形成在B掺杂的Epi-Si（Ge）层上，例如金属屏蔽层，电介质层，微透镜和滤色器。

    Grids in backside illumination image sensor chips and methods for forming the same
    10.
    发明授权
    Grids in backside illumination image sensor chips and methods for forming the same 有权
    背面照明图像传感器芯片中的栅格及其形成方法

    公开(公告)号：US09041140B2

    公开(公告)日：2015-05-26

    申请号：US13420847

    申请日：2012-03-15

    申请人： Shiu-Ko JangJian ,  Min Hao Hong ,  Ting-Chun Wang ,  Chung-Ren Sun

    发明人： Shiu-Ko JangJian ,  Min Hao Hong ,  Ting-Chun Wang ,  Chung-Ren Sun

    IPC分类号： H01L31/18 ,  H01L27/146

    CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14683

    摘要： A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

    摘要翻译： 一种器件包括具有正面和背面的半导体衬底，设置在半导体衬底的前侧的光敏器件以及彼此平行的第一和第二栅极线。 第一和第二栅格线位于半导体衬底的背面并覆盖其上。 该装置还包括粘合层，粘合层上的金属氧化物层和金属层上的高折射率层。 粘合层，金属氧化物层和高折射率层基本上是共形的，并且在第一和第二栅格线的顶表面和侧壁上延伸。