- 专利标题： SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
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申请号： US13417337申请日： 2012-03-12
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公开(公告)号： US20130234261A1公开(公告)日： 2013-09-12
- 发明人: Ming-Te Wei , Shin-Chuan Huang , Yu-Hsiang Hung , Po-Chao Tsao , Chia-Jui Liang , Ming-Tsung Chen , Chia-Wen Liang
- 申请人： Ming-Te Wei , Shin-Chuan Huang , Yu-Hsiang Hung , Po-Chao Tsao , Chia-Jui Liang , Ming-Tsung Chen , Chia-Wen Liang
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacent to the gate structure, a doped epitaxial material filling up the recess, a cap layer including an undoped epitaxial material and disposed on the doped epitaxial material, a lightly doped drain disposed below the cap layer and sandwiched between the doped epitaxial material and the cap layer, and a silicide disposed on the cap layer and covering the doped epitaxial material to cover the cap layer together with the outer spacer without directly contacting the lightly doped drain.
公开/授权文献
- US09136348B2 Semiconductor structure and fabrication method thereof 公开/授权日：2015-09-15
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