- 专利标题： FINFET DEVICE HAVING A STRAINED REGION
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申请号： US13416926申请日： 2012-03-09
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公开(公告)号： US20130237026A1公开(公告)日： 2013-09-12
- 发明人: Tsung-Lin Lee , Feng Yuan , Hung-Li Chiang , Chih Chieh Yeh
- 申请人： Tsung-Lin Lee , Feng Yuan , Hung-Li Chiang , Chih Chieh Yeh
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/30
摘要：
A method of fabricating a semiconductor device includes providing a substrate having a fin disposed thereon. A gate structure is formed on the fin. The gate structure interfaces at least two sides of the fin. A stress film is formed on the substrate including on the fin. The substrate including the stress film is annealed. The annealing provides a tensile strain in a channel region of the fin. For example, a compressive strain in the stress film may be transferred to form a tensile stress in the channel region of the fin.
公开/授权文献
- US1694604A Heat-deflection shield 公开/授权日：1928-12-11
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