发明申请
- 专利标题: Methods and Apparatus for Direct Connections to Through Vias
- 专利标题(中): 用于直接连接到通孔的方法和装置
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申请号: US13420369申请日: 2012-03-14
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公开(公告)号: US20130241057A1公开(公告)日: 2013-09-19
- 发明人: Chen-Hua Yu , Yu-Hsiang Hu , Wen-Chih Chiou , Sao-Ling Chiu , Shih-Peng Tai
- 申请人: Chen-Hua Yu , Yu-Hsiang Hu , Wen-Chih Chiou , Sao-Ling Chiu , Shih-Peng Tai
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/60
摘要:
Methods and apparatus for direct connection to a through via. An apparatus includes a substrate having a front side surface and a back side surface; conductive through vias formed in the substrate and having through via protrusions extending from the back side surface; solder connectors on another device and coupling the another device to the substrate, wherein the solder connectors correspond to the through via protrusions and enclose the through via protrusions to form solder joints; and connectors on the front side surface of the substrate for forming additional electrical connections. Methods include providing a substrate with through vias; thinning the substrate; etching the substrate to create through via protrusions; aligning another device with solder connectors on a surface corresponding to the through via protrusions; placing the solder connectors in contact with the protrusions; and performing a thermal reflow to form solder joints around the through via protrusions.
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