公开(公告)号：US20130241057A1

公开(公告)日：2013-09-19

申请号：US13420369

申请日：2012-03-14

申请人： Chen-Hua Yu ,  Yu-Hsiang Hu ,  Wen-Chih Chiou ,  Sao-Ling Chiu ,  Shih-Peng Tai

发明人： Chen-Hua Yu ,  Yu-Hsiang Hu ,  Wen-Chih Chiou ,  Sao-Ling Chiu ,  Shih-Peng Tai

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L25/50 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/06181 ,  H01L2224/1191 ,  H01L2224/13009 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13078 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/17106 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/81986 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2924/00

摘要： Methods and apparatus for direct connection to a through via. An apparatus includes a substrate having a front side surface and a back side surface; conductive through vias formed in the substrate and having through via protrusions extending from the back side surface; solder connectors on another device and coupling the another device to the substrate, wherein the solder connectors correspond to the through via protrusions and enclose the through via protrusions to form solder joints; and connectors on the front side surface of the substrate for forming additional electrical connections. Methods include providing a substrate with through vias; thinning the substrate; etching the substrate to create through via protrusions; aligning another device with solder connectors on a surface corresponding to the through via protrusions; placing the solder connectors in contact with the protrusions; and performing a thermal reflow to form solder joints around the through via protrusions.

摘要翻译： 用于直接连接到通孔的方法和装置。 一种设备包括：具有前侧表面和后侧表面的基板; 通过形成在基板中的通孔，并且具有从后侧表面延伸的通孔突出部; 焊接连接器并且将另一器件耦合到衬底，其中焊料连接器对应于通孔突起并且包围通孔突起以形成焊点; 以及用于形成附加电连接的衬底的前侧表面上的连接器。 方法包括提供具有通孔的基底; 减薄基材; 蚀刻衬底以通过通孔突起形成; 在与通孔突起相对应的表面上与另一装置对准焊料连接器; 将焊料连接器放置成与突起接触; 并且进行热回流以在贯通通孔突起周围形成焊点。

公开(公告)号：US09324756B2

公开(公告)日：2016-04-26

申请号：US13558063

申请日：2012-07-25

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Jing-Cheng Lin

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Jing-Cheng Lin

IPC分类号： H01L31/0232 ,  H01L27/146 ,  H01L31/02 ,  H01L21/768 ,  H01L23/48 ,  H01L21/683 ,  H01L23/00

CPC分类号： H01L27/14689 ,  H01L21/6835 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02002 ,  H01L31/02327 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/023 ,  H01L2224/13101 ,  H01L2924/014 ,  H01L2924/00014

摘要： A device includes a semiconductor substrate, an image sensor at a front surface of the semiconductor substrate, and a plurality of dielectric layers over the image sensor. A color filter and a micro lens are disposed over the plurality of dielectric layers and aligned to the image sensor. A through via penetrates through the semiconductor substrate. A Redistribution Line (RDL) is disposed over the plurality of dielectric layers, wherein the RDL is electrically coupled to the through via. A polymer layer covers the RDL.

摘要翻译： 一种器件包括半导体衬底，在半导体衬底的前表面处的图像传感器和图像传感器上的多个电介质层。 滤色器和微透镜设置在多个介电层上并与图像传感器对准。 穿通通孔穿过半导体衬底。 再分配线（RDL）设置在多个介电层上，其中RDL电连接到通孔。 聚合物层覆盖RDL。

公开(公告)号：US08900994B2

公开(公告)日：2014-12-02

申请号：US13157137

申请日：2011-06-09

申请人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Wen-Chih Chiou ,  Fang Wen Tsai ,  Chen-Yu Tsai

发明人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Wen-Chih Chiou ,  Fang Wen Tsai ,  Chen-Yu Tsai

IPC分类号： H01L21/44 ,  H01L25/065 ,  H01L23/00 ,  H01L23/48 ,  H01L21/683

CPC分类号： H01L25/0657 ,  H01L21/0217 ,  H01L21/6835 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76871 ,  H01L21/76895 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05018 ,  H01L2224/05023 ,  H01L2224/05025 ,  H01L2224/05073 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05559 ,  H01L2224/05562 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/1411 ,  H01L2224/14181 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/01029 ,  H01L2224/05552

摘要： A system and method for manufacturing a through silicon via is disclosed. An embodiment comprises forming a through silicon via with a liner protruding from a substrate. A passivation layer is formed over the substrate and the through silicon via, and the passivation layer and liner are recessed from the sidewalls of the through silicon via. Conductive material may then be formed in contact with both the sidewalls and a top surface of the through silicon via.

摘要翻译： 公开了一种制造硅通孔的系统和方法。 一个实施例包括用从衬底突出的衬垫形成通孔硅通孔。 钝化层形成在衬底和穿通硅通孔之上，钝化层和衬垫从通硅通孔的侧壁凹陷。 然后可以将导电材料形成为与通孔硅通孔的两个侧壁和顶表面接触。

公开(公告)号：US08853830B2

公开(公告)日：2014-10-07

申请号：US12178021

申请日：2008-07-23

申请人： Hung-Pin Chang ,  Weng-Jin Wu ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Hung-Pin Chang ,  Weng-Jin Wu ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L21/768 ,  H01L23/538 ,  H01L25/00 ,  H01L23/48 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L21/768 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor substrate structure for use in a semiconductor substrate stack system is presented. The method includes a semiconductor substrate which includes a front-face, a backside, a bulk layer, an interconnect layer that includes a plurality of inter-metal dielectric layers sandwiched between conductive layers, a contact layer that is between the bulk layer and the interconnect layer, and a TSV structure commencing between the bulk layer and the contact layer and terminating at the backside of the substrate. The TSV structure is electrically coupled to the interconnect layer and the TSV structure is electrically coupled to a bonding pad on the backside.

摘要翻译： 本发明提供一种制造用于半导体衬底叠层系统的半导体衬底结构的方法。 该方法包括半导体衬底，其包括前表面，背面，体层，互连层，其包括夹在导电层之间的多个金属间介电层，位于体层和互连之间的接触层 层，以及从本体层和接触层之间开始并终止于衬底背面的TSV结构。 TSV结构电耦合到互连层，并且TSV结构电耦合到背面的接合焊盘。

公开(公告)号：US08759150B2

公开(公告)日：2014-06-24

申请号：US13488188

申请日：2012-06-04

申请人： Hsien-Pin Hu ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Hung-Jung Tu

发明人： Hsien-Pin Hu ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Hung-Jung Tu

IPC分类号： H01L21/50

CPC分类号： H01L21/561 ,  H01L21/486 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/97 ,  H01L25/0655 ,  H01L2224/05001 ,  H01L2224/05027 ,  H01L2224/05571 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.

摘要翻译： 一种方法包括提供包括衬底的中介层晶片，以及从衬底的前表面延伸到衬底中的多个贯通衬底通孔（TSV）。 多个管芯结合到插入件晶片的前表面上。 在结合多个模具的步骤之后，在基板的背面进行研磨以暴露多个TSV。 多个金属凸块形成在插入器晶片的背面并电耦合到多个TSV。

公开(公告)号：US08426961B2

公开(公告)日：2013-04-23

申请号：US12823851

申请日：2010-06-25

申请人： Ying-Ching Shih ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Ying-Ching Shih ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： H01L23/14 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L21/48

CPC分类号： H01L21/76885 ,  H01L21/486 ,  H01L21/56 ,  H01L23/13 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/04105 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/2518 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/181 ,  H05K1/0306 ,  H05K1/185 ,  H05K3/4007 ,  H05K2203/016 ,  H05K2203/025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2224/16145 ,  H01L2924/00012

摘要： A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.

摘要翻译： 一种装置包括：插入件，其包括基板; 以及衬底上的至少一个电介质层。 多个穿通基板通孔（TSV）穿透基板。 第一金属凸块在至少一个电介质层中并电耦合到多个TSV。 第二金属凸块在至少一个电介质层的上方。 模具嵌入在至少一个电介质层中并结合到第一金属凸块。

公开(公告)号：US08405225B2

公开(公告)日：2013-03-26

申请号：US13437533

申请日：2012-04-02

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Hung-Jung Tu ,  Ku-Feng Yang

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Hung-Jung Tu ,  Ku-Feng Yang

IPC分类号： H01L23/48 ,  H01L23/31 ,  H01L25/00

CPC分类号： H01L21/8221 ,  H01L21/76898 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05609 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  Y10S148/164 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/013

摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.

摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。

公开(公告)号：US08387674B2

公开(公告)日：2013-03-05

申请号：US12054097

申请日：2008-03-24

申请人： Chen-Hua Yu ,  Jui-Pin Hung ,  Weng-Jin Wu ,  Jean Wang ,  Wen-Chih Chiou

发明人： Chen-Hua Yu ,  Jui-Pin Hung ,  Weng-Jin Wu ,  Jean Wang ,  Wen-Chih Chiou

IPC分类号： B29C65/00

CPC分类号： H01L25/50 ,  H01L21/67051 ,  H01L24/28 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/8301 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01094 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/19042 ,  Y10T156/14 ,  H01L2924/00

摘要： The present disclosure provides a bonding apparatus. The bonding apparatus includes a cleaning module designed for cleaning chips; and a chip-to-wafer bonding chamber configured to receive the chips from the cleaning module and designed for bonding the chips to a wafer.

公开(公告)号：US08377796B2

公开(公告)日：2013-02-19

申请号：US12539374

申请日：2009-08-11

申请人： Chia-Lin Yu ,  Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

发明人： Chia-Lin Yu ,  Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC分类号： H01L21/768

CPC分类号： H01L21/02365 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L29/12

摘要： A method of forming a circuit structure includes providing a substrate; forming recesses in the substrate; forming a mask layer over the substrate, wherein the mask layer covers non-recessed portions of the substrate, with the recesses exposed through openings in the mask layer; forming a buffer/nucleation layer on exposed portions of the substrate in the recesses; and growing a group-III group-V (III-V) compound semiconductor material from the recesses until portions of the III-V compound semiconductor material grown from the recesses join each other to form a continuous III-V compound semiconductor layer.

摘要翻译： 形成电路结构的方法包括提供基板; 在基板上形成凹部; 在所述基板上形成掩模层，其中所述掩模层覆盖所述基板的非凹部，所述凹部通过所述掩模层中的开口暴露; 在所述凹部中的所述基板的暴露部分上形成缓冲/成核层; 以及从所述凹部生长第III族V族化合物半导体材料，直到从所述凹部生长的所述III-V族化合物半导体材料的部分相互连接形成连续的III-V族化合物半导体层。

公开(公告)号：US08278679B2

公开(公告)日：2012-10-02

申请号：US12235269

申请日：2008-09-22

申请人： Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

发明人： Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/005 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405

摘要： An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.

摘要翻译： 提出了一种LED器件及其制造方法，包括嵌入式顶部电极。 LED装置包括LED结构和顶部电极。 LED结构包括设置在基板上的层，包括有源发光区域。 LED结构的顶层是顶部接触层。 顶部电极嵌入到顶部接触层中，其中顶部电极电接触顶部接触层。