- 专利标题: High-side driver circuit
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申请号: US13596113申请日: 2012-08-28
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公开(公告)号: US20130241601A1公开(公告)日: 2013-09-19
- 发明人: Tsung-Lin CHEN , Edward Yi CHANG , Wei-Hua CHIENG , Stone CHENG , Shyr-Long JENG , Che-Wei CHANG
- 申请人: Tsung-Lin CHEN , Edward Yi CHANG , Wei-Hua CHIENG , Stone CHENG , Shyr-Long JENG , Che-Wei CHANG
- 优先权: TW101108777 20120315
- 主分类号: H03K3/00
- IPC分类号: H03K3/00
摘要:
The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source.
公开/授权文献
- US08581638B2 High-side driver circuit 公开/授权日:2013-11-12
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