专利检索 ap:("Tsung-Lin CHEN" OR "Edward Yi CHANG" OR "Wei-Hua CHIENG" OR "Stone CHENG" OR "Shyr-Long JENG" OR "Che-Wei CHANG") AND inv:"Che-Wei CHANG" 第 1 页

1.

发明申请
High-side driver circuit 有权

公开(公告)号：US20130241601A1

公开(公告)日：2013-09-19

申请号：US13596113

申请日：2012-08-28

申请人： Tsung-Lin CHEN , Edward Yi CHANG , Wei-Hua CHIENG , Stone CHENG , Shyr-Long JENG , Che-Wei CHANG

发明人： Tsung-Lin CHEN , Edward Yi CHANG , Wei-Hua CHIENG , Stone CHENG , Shyr-Long JENG , Che-Wei CHANG

IPC分类号： H03K3/00

CPC分类号： H03K17/063 , H03K2217/0063 , H03K2217/0081

摘要： The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source.