发明申请
US20130242646A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DIE INCLUDING AN INTEGRATED MAGNETIC SECURITY STRUCTURE
有权
磁阻随机存取存储器（MRAM），包括集成磁性安全结构
- 专利标题： MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DIE INCLUDING AN INTEGRATED MAGNETIC SECURITY STRUCTURE
- 专利标题（中）： 磁阻随机存取存储器（MRAM），包括集成磁性安全结构
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申请号： US13419066申请日： 2012-03-13
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公开(公告)号： US20130242646A1公开(公告)日： 2013-09-19
- 发明人: Romney R. Katti , James L. Tucker , Anuj Kohli
- 申请人： Romney R. Katti , James L. Tucker , Anuj Kohli
- 申请人地址： US NJ Morristown
- 专利权人： HONEYWELL INTERNATIONAL INC.
- 当前专利权人： HONEYWELL INTERNATIONAL INC.
- 当前专利权人地址： US NJ Morristown
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; H01L21/8246
摘要：
An MRAM die may include a first write line, a second write line, an MRAM cell disposed between the first write line and the second write line, and a magnetic security structure adjacent to the MRAM cell. The magnetic security structure may include a permanent magnetic layer and a soft magnetic layer.
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