发明申请
US20130244016A1 FERROELECTRIC THIN FILM HAVING SUPERLATTICE STRUCTURE, MANUFACTURING METHOD THEREOF, FERROELECTRIC ELEMENT, AND MANUFACTURING METHOD THEREOF 有权
具有超导结构的电解薄膜,其制造方法,电磁元件及其制造方法

  • 专利标题: FERROELECTRIC THIN FILM HAVING SUPERLATTICE STRUCTURE, MANUFACTURING METHOD THEREOF, FERROELECTRIC ELEMENT, AND MANUFACTURING METHOD THEREOF
  • 专利标题(中): 具有超导结构的电解薄膜,其制造方法,电磁元件及其制造方法
  • 申请号: US13878571
    申请日: 2011-10-04
  • 公开(公告)号: US20130244016A1
    公开(公告)日: 2013-09-19
  • 发明人: Minoru OsadaTakayoshi Sasaki
  • 申请人: Minoru OsadaTakayoshi Sasaki
  • 优先权: JP2010-230132 20101013
  • 国际申请: PCT/JP2011/072844 WO 20111004
  • 主分类号: H01L41/18
  • IPC分类号: H01L41/18 C30B19/06
FERROELECTRIC THIN FILM HAVING SUPERLATTICE STRUCTURE, MANUFACTURING METHOD THEREOF, FERROELECTRIC ELEMENT, AND MANUFACTURING METHOD THEREOF
摘要:
At least two types of dielectric materials such as oxide nanosheets having a layered perovskite structure that differ from each other are laminated, and the nanosheets are bonded to each other via an ionic material, thereby producing a superlattice structure-having ferroelectric thin film. Having the layered structure, the film can exhibit ferroelectricity as a whole, though not using a ferroelectric material therein. Accordingly, there is provided a ferroelectric film based on a novel principle, which is favorable for ferroelectric memories and others and which is free from a size effect even though extremely thinned.
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