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公开(公告)号：US11280023B2
公开(公告)日：2022-03-22
申请号：US16736886
申请日：2020-01-08
摘要： A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.
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公开(公告)号：US09945049B2
公开(公告)日：2018-04-17
申请号：US14903761
申请日：2014-07-23
IPC分类号： C03B19/04 , C30B9/12 , C30B19/04 , C30B19/02 , C30B29/16 , C30B19/06 , C30B29/22 , C09K5/14 , G02F1/09
摘要： The present invention relates to a process for the preparation of hulk or thin-film single-crystals of cubic sesquioxides (space group No. 206, Ia-3) of scandium, yttrium or rare earth metals doped or not doped with lanthanide ions having a valency of +III by a high-temperature flux growth technique and to the applications of the nondoped single-crystals obtained according to this process, in particular in the optical field.
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公开(公告)号：US09920449B2
公开(公告)日：2018-03-20
申请号：US15113459
申请日：2015-02-12
CPC分类号： C30B19/04 , C30B9/06 , C30B9/12 , C30B19/062 , C30B29/36
摘要： The production method of an SiC single crystal is a production method of an SiC single crystal by a solution growth process. The production method includes a contact step A, a contact step B, and a growth step. In the contact step A, a partial region of the principal surface is brought into contact with a stored Si—C solution. In the contact step B, a contact region between the principal surface and the stored Si—C solution expands, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A. In the growth step, an SiC single crystal is grown on the principal surface which is in contact with the stored Si—C solution.
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公开(公告)号：US20170327968A1
公开(公告)日：2017-11-16
申请号：US15585497
申请日：2017-05-03
CPC分类号： C30B19/10 , C30B9/06 , C30B9/10 , C30B19/04 , C30B19/062 , C30B19/08 , C30B19/12 , C30B29/36
摘要： Provided is a method for producing a SiC single crystal wherein a 4H—SiC single crystal is grown by minimizing generation of polytypes other than 4H. A method for producing a SiC single crystal by a solution process, wherein a seed crystal is 4H—SiC, and a (000-1) face of the seed crystal is a growth surface, wherein the method includes: setting a temperature at a center section of a region of a surface of a Si—C solution where the growth surface of the seed crystal contacts to 1900° C. or higher, and limiting a ΔTc/ΔTa to 1.7 or greater, wherein the ΔTc/ΔTa is a ratio of a temperature gradient ΔTc between the center section and a location 10 mm below the center section in the vertical direction, with respect to a temperature gradient ΔTa between the center section and a location 10 mm from the center section in the horizontal direction.
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公开(公告)号：US20170260648A1
公开(公告)日：2017-09-14
申请号：US15411792
申请日：2017-01-20
发明人： YOSHIO OKAYAMA , MASAKI NOBUOKA
CPC分类号： C30B19/12 , C30B19/02 , C30B19/062 , C30B29/403
摘要： A method for producing a Group III nitride crystal includes: preparing a protective layer on a region except for an epitaxial growth surface of an RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of a trivaient element selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of a trivalent element selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of a divalent element selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd); and forming a Group III nitride crystal on the epitaxial growth surface of the RAMO4 substrate by a flux method.
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公开(公告)号：US09732441B2
公开(公告)日：2017-08-15
申请号：US14125625
申请日：2012-06-15
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
IPC分类号： C30B9/00 , C30B35/00 , C30B9/10 , C30B29/36 , C30B15/32 , C30B17/00 , C30B11/00 , C30B19/06 , C30B19/08
CPC分类号： C30B35/00 , C30B9/10 , C30B11/003 , C30B15/32 , C30B17/00 , C30B19/068 , C30B19/08 , C30B29/36 , Y10T117/1068 , Y10T117/1092
摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.
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公开(公告)号：US09732437B2
公开(公告)日：2017-08-15
申请号：US14824811
申请日：2015-08-12
发明人： Takayuki Shirai
IPC分类号： H01L21/00 , C30B19/10 , C30B19/02 , C30B19/06 , C30B19/08 , C30B19/12 , C30B29/36 , H01L29/16 , H01L29/04 , C30B9/06 , C30B19/04
CPC分类号： C30B19/10 , C30B9/06 , C30B19/02 , C30B19/04 , C30B19/062 , C30B19/067 , C30B19/08 , C30B19/106 , C30B19/12 , C30B29/36 , H01L29/04 , H01L29/1608
摘要： A low-resistance p-type SiC single crystal containing no inclusions is provided. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate 14 is contacted with a Si—C solution 24 having a temperature gradient in which the temperature falls from the interior toward the surface, to grow a SiC single crystal, and wherein the method comprises: using, as the Si—C solution, a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al, and making the temperature gradient y (° C./cm) in the surface region of the Si—C solution 24 satisfy the following formula (1): y≧0.15789x+21.52632 (1) wherein x represents the Al content (at %) of the Si—C solution.
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公开(公告)号：US09732436B2
公开(公告)日：2017-08-15
申请号：US14405543
申请日：2013-04-16
申请人： Takayuki Shirai , Katsunori Danno
发明人： Takayuki Shirai , Katsunori Danno
IPC分类号： C30B19/06 , C30B9/06 , C30B9/00 , C30B19/04 , C30B29/36 , C30B17/00 , C30B19/02 , C30B19/10 , C30B9/10 , C30B19/08 , C30B19/12
CPC分类号： C30B19/062 , C30B9/00 , C30B9/06 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/04 , C30B19/08 , C30B19/10 , C30B19/12 , C30B29/36
摘要： Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.
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公开(公告)号：US09708734B2
公开(公告)日：2017-07-18
申请号：US14648027
申请日：2013-11-11
CPC分类号： C30B30/04 , C30B17/00 , C30B19/04 , C30B19/062 , C30B19/067 , C30B19/068 , C30B19/10 , C30B19/12 , C30B29/36
摘要： The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while avoiding the fluctuations in the solution-contacting position of a seed crystal among production operations. A method for producing a SiC single crystal by bringing a SiC seed crystal supported by a supporting bar into contact with a solution that has been heated by high-frequency induction to thereby grow the SiC single crystal, wherein the supporting bar is born down while applying a magnetic field to the solution to thereby bring the SiC seed crystal into contact with the solution, and subsequently the application of the magnetic field is halted to grow the SiC single crystal.
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公开(公告)号：US20170167049A1
公开(公告)日：2017-06-15
申请号：US15366619
申请日：2016-12-01
发明人： Katsunori DANNO
CPC分类号： C30B19/068 , C30B19/04 , C30B19/062 , C30B19/12 , C30B29/36 , C30B29/64
摘要： A SiC single crystal comprising no polycrystals, and no cracking other than at the side edges is provided. A method for producing SiC single crystal in which seed crystal held at bottom end face of holding shaft is contacted with Si—C solution having temperature gradient to grow SiC single crystal, wherein the contour of the end face of the holding shaft is smaller than the contour of the top face of the seed crystal, the top face of the seed crystal has center section held in contact with the entire surface of the end face of the holding shaft and outer peripheral section that is not in contact with the end face of the holding shaft, and carbon sheet is disposed on the top face of the seed crystal so as to cover at least the outer peripheral section, among the center section and the outer peripheral section.
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