发明申请
- 专利标题: Multilevel Memory Bus System For Solid-State Mass Storage
- 专利标题(中): 用于固态海量存储的多级内存总线系统
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申请号: US13890229申请日: 2013-05-08
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公开(公告)号: US20130246694A1公开(公告)日: 2013-09-19
- 发明人: Ricardo H. Bruce , Elsbeth Lauren Tagayo Villapana , Joel Alonzo Baylon
- 申请人: Ricardo H. Bruce , Elsbeth Lauren Tagayo Villapana , Joel Alonzo Baylon
- 申请人地址: US CA Fremont
- 专利权人: BITMICRO NETWORKS, INC.
- 当前专利权人: BITMICRO NETWORKS, INC.
- 当前专利权人地址: US CA Fremont
- 主分类号: G06F12/02
- IPC分类号: G06F12/02
摘要:
The present invention relates to a multilevel memory bus system for transferring information between at least one DMA controller and at least one solid-state semiconductor memory device, such as NAND flash memory devices or the like. This multilevel memory bus system includes at least one DMA controller coupled to an intermediate bus; a flash memory bus; and a flash buffer circuit between the intermediate bus and the flash memory bus. This multilevel memory bus system may be disposed to support: an n-bit wide bus width, such as nibble-wide or byte-wide bus widths; a selectable data sampling rate, such as a single or double sampling rate, on the intermediate bus; a configurable bus data rate, such as a single, double, quad, or octal data sampling rate; CRC protection; an exclusive busy mechanism; dedicated busy lines; or any combination of these.
公开/授权文献
- US08788725B2 Multilevel memory bus system for solid-state mass storage 公开/授权日:2014-07-22
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