- 专利标题： Source/Drain Profile for FinFET
-
申请号： US13426106申请日： 2012-03-21
-
公开(公告)号： US20130248948A1公开(公告)日： 2013-09-26
- 发明人: Ta-Chun Ma , Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人： Ta-Chun Ma , Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
An embodiment is a FinFET device. The FinFET device comprises a fin, a first source/drain region, a second source/drain region, and a channel region. The fin is raised above a substrate. The first source/drain region and the second source/drain region are in the fin. The channel region is laterally between the first and second source/drain regions. The channel region has facets that are not parallel and not perpendicular to a top surface of the substrate.
公开/授权文献
- US09105654B2 Source/drain profile for FinFET 公开/授权日：2015-08-11
信息查询
IPC分类:
