发明申请
- 专利标题： Semiconductor Arrangement with a Superjunction Transistor and a Further Device Integrated in a Common Semiconductor Body
- 专利标题（中）： 集成在公共半导体器件中的超级结晶体管和其他器件的半导体布置
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申请号： US13429568申请日： 2012-03-26
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公开(公告)号： US20130249001A1公开(公告)日： 2013-09-26
- 发明人: Armin Willmeroth , Franz Hirler , Peter Irsigler
- 申请人： Armin Willmeroth , Franz Hirler , Peter Irsigler
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor arrangement includes a semiconductor body and a power transistor arranged in a first device region of the semiconductor body. The power transistor includes at least one source region, a drain region, and at least one body region, at least one drift region of a first doping type and at least one compensation region of a second doping complementary to the first doping type, and a gate electrode arranged adjacent to the at least one body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement also includes a further semiconductor device arranged in a second device region of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The further semiconductor device includes device regions arranged in the first semiconductor region.
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