发明申请
- 专利标题： Semiconductor Device and Method of Forming Conductive Layer Over Metal Substrate for Electrical Interconnect of Semiconductor Die
- 专利标题（中）： 半导体器件及半导体芯片电气互连金属基板上的导电层形成方法
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申请号： US13425349申请日： 2012-03-20
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公开(公告)号： US20130249104A1公开(公告)日： 2013-09-26
- 发明人: HeeJo Chi , NamJu Cho , HanGil Shin
- 申请人： HeeJo Chi , NamJu Cho , HanGil Shin
- 申请人地址： SG Singapore
- 专利权人： STATS CHIPPAC, LTD.
- 当前专利权人： STATS CHIPPAC, LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L21/50
摘要：
A semiconductor device has a substrate with a cavity. A conductive layer is formed within the cavity and over the substrate outside the cavity. A plurality of indentations can be formed in a surface of the substrate opposite the cavity for stress relief. A first semiconductor die is mounted within the cavity. A plurality of conductive vias can be formed through the first semiconductor die. An insulating layer is disposed between the first semiconductor die and substrate with the first conductive layer embedded within the first insulating layer. An encapsulant is deposited over the first semiconductor die and substrate. An interconnect structure is formed over the encapsulant. The interconnect structure is electrically connected to the first semiconductor die and first conductive layer. The substrate is removed to expose the first conductive layer. A second semiconductor die is mounted to the conductive layer over the first semiconductor die.