发明申请
- 专利标题： HARMONIC RESIST MODEL FOR USE IN A LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD
- 专利标题（中）： 用于地平线设备和装置制造方法的谐波电阻模型
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申请号： US13896805申请日： 2013-05-17
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公开(公告)号： US20130251237A1公开(公告)日： 2013-09-26
- 发明人: Yu CAO , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
- 申请人： Yu CAO , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
- 申请人地址： NL Veldhoven
- 专利权人： ASML NETHERLANDS B.V.
- 当前专利权人： ASML NETHERLANDS B.V.
- 当前专利权人地址： NL Veldhoven
- 主分类号： G06T7/00
- IPC分类号： G06T7/00
摘要：
A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.
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