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    MODEL-BASED SCANNER TUNING SYSTEMS AND METHODS
    3.
    发明申请
    MODEL-BASED SCANNER TUNING SYSTEMS AND METHODS 有权
    基于模型的扫描仪调谐系统和方法

    公开(公告)号：US20140046646A1

    公开(公告)日：2014-02-13

    申请号：US14064917

    申请日：2013-10-28

    申请人： Yu CAO ,  Wenjin Shao ,  Ronaldus Johannes Gijsbertus Goossens ,  Jun Ye ,  James Patrick Koonmen

    发明人： Yu CAO ,  Wenjin Shao ,  Ronaldus Johannes Gijsbertus Goossens ,  Jun Ye ,  James Patrick Koonmen

    IPC分类号： G06F17/50

    CPC分类号： B29C67/0088 ,  B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

    摘要： Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.

    摘要翻译： 描述用于调整光刻工艺的系统和方法。 保持目标扫描仪的型号，参考一组可调谐参数来定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 可以相对于参考扫描仪的性能来表征相关扫描仪系列的性能。 差分模型可能包括诸如参数偏移和可能用于模拟成像行为差异的其他差异的信息。

    SMART SELECTION AND/OR WEIGHTING OF PARAMETERS FOR LITHOGRAPHIC PROCESS SIMULATION
    4.
    发明申请
    SMART SELECTION AND/OR WEIGHTING OF PARAMETERS FOR LITHOGRAPHIC PROCESS SIMULATION 有权
    智能选择和/或加权参数用于光刻过程模拟

    公开(公告)号：US20110113390A1

    公开(公告)日：2011-05-12

    申请号：US12615004

    申请日：2009-11-09

    申请人： Yu CAO ,  Wenjin Shao ,  Henying Feng ,  Fel Du ,  Martin Snajdr

    发明人： Yu CAO ,  Wenjin Shao ,  Henying Feng ,  Fel Du ,  Martin Snajdr

    IPC分类号： G06F17/50

    CPC分类号： G03F7/705 ,  G03F7/70666

    摘要： The present invention generally relates to simulating a lithographic process, and more particularly to methods for smart selection and smart weighting when selecting parameters and/or kernels used in aerial image computation. According to one aspect, advantages in simulation throughput and/or accuracy can be achieved by selecting TCC kernels more intelligently, allowing highly accurate aerial images to be simulated using a relatively fewer number of TCC kernels than in the state of the art. In other words, the present invention allows for aerial images to be simulated with the same or better accuracy using much less simulation throughput than required in the prior art, all else being equal.

    摘要翻译： 本发明一般涉及模拟光刻工艺，更具体地说，涉及在选择在空间图像计算中使用的参数和/或核心时智能选择和智能加权的方法。 根据一个方面，可以通过更智能地选择TCC核来实现模拟吞吐量和/或精度的优点，从而能够使用比现有技术中相对较少数量的TCC内核来模拟高精度的空间图像。 换句话说，本发明允许使用比现有技术中所需要的模拟吞吐量低得多的相同或更好的精度来模拟航空图像，其他所有方面都相同。

    DELTA TCC FOR FAST SENSITIVITY MODEL COMPUTATION
    5.
    发明申请
    DELTA TCC FOR FAST SENSITIVITY MODEL COMPUTATION 有权
    DELTA TCC快速灵敏度模型计算

    公开(公告)号：US20100260427A1

    公开(公告)日：2010-10-14

    申请号：US12614180

    申请日：2009-11-06

    申请人： Yu CAO ,  Jun Ye ,  Wenjin Shao ,  Hua Cao

    发明人： Yu CAO ,  Jun Ye ,  Wenjin Shao ,  Hua Cao

    IPC分类号： G06K9/68

    CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70483 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70991 ,  G06F17/5068

    摘要： A method for determining a difference between a reference image and a further image of a pattern, the method including determining a reference imaging function; determining parameters of a difference function representative of a difference between the reference imaging function and a further imaging function; calculating a difference between the reference image and the further image of the pattern based on the difference function and the determined parameters.

    摘要翻译： 一种用于确定参考图像与图案的另一图像之间的差异的方法，所述方法包括确定参考成像功能; 确定代表参考成像功能和另外的成像功能之间的差异的差分函数的参数; 基于差分函数和确定的参数来计算参考图像和图像的另外图像之间的差。

    THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHY SIMULATION
    6.
    发明申请
    THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHY SIMULATION 有权

    公开(公告)号：US20130139118A1

    公开(公告)日：2013-05-30

    申请号：US13736929

    申请日：2013-01-08

    申请人： Peng LIU ,  Yu CAO ,  Luoqi CHEN ,  Jun YE

    发明人： Peng LIU ,  Yu CAO ,  Luoqi CHEN ,  Jun YE

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/705 ,  G06F17/5009

    摘要： A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

    FAST FREEFORM SOURCE AND MASK CO-OPTIMIZATION METHOD
    7.
    发明申请
    FAST FREEFORM SOURCE AND MASK CO-OPTIMIZATION METHOD 审中-公开
    快速FREEFORM源和MASK优化方法

    公开(公告)号：US20140068530A1

    公开(公告)日：2014-03-06

    申请号：US14075917

    申请日：2013-11-08

    申请人： Luoqi CHEN ,  Jun YE ,  Yu CAO

    发明人： Luoqi CHEN ,  Jun YE ,  Yu CAO

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/70083 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5068

    摘要： The present invention relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present invention allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present invention allows for free-form optimization, without the constraints required by conventional optimization techniques.

    摘要翻译： 本发明涉及光刻设备和工艺，更具体地涉及用于优化用于光刻设备和工艺的照明源和掩模的工具。 根据某些方面，本发明通过允许直接计算成本函数的梯度来显着加快优化的收敛。 根据其他方面，本发明允许同时优化源和掩模，从而显着加速整体收敛。 根据另外的方面，本发明允许自由形式优化，而不需要常规优化技术所要求的限制。

    SYSTEM AND METHOD FOR LITHOGRAPHY SIMULATION
    9.
    发明申请
    SYSTEM AND METHOD FOR LITHOGRAPHY SIMULATION 有权
    系统和方法进行算术仿真

    公开(公告)号：US20130332894A1

    公开(公告)日：2013-12-12

    申请号：US13971381

    申请日：2013-08-20

    申请人： Jun YE ,  Yen-Wen LU ,  Yu CAO

    发明人： Jun YE ,  Yen-Wen LU ,  Yu CAO

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5009 ,  G03F1/00 ,  G03F7/004 ,  G03F7/705 ,  G03F7/70666 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06T7/0004 ,  G06T2207/30148 ,  G21K5/00

    摘要： In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

    摘要翻译： 在一个方面，本发明涉及用于模拟，验证，检查，表征，确定和/或评估光刻设计，技术和/或系统的技术和系统，和/或由其执行的各个功能或使用的组件 其中。 在一个实施例中，本发明是加速光刻特性和/或性质的光刻模拟，检查，表征和/或评估以及光刻系统和处理技术的效果和/或相互作用的系统和方法。

    METHODS AND SYSTEM FOR MODEL-BASED GENERIC MATCHING AND TUNING
    10.
    发明申请
    METHODS AND SYSTEM FOR MODEL-BASED GENERIC MATCHING AND TUNING 有权

    公开(公告)号：US20130263064A1

    公开(公告)日：2013-10-03

    申请号：US13893534

    申请日：2013-05-14

    申请人： Yu CAO ,  Hanying Feng ,  Jun Ye

    发明人： Yu CAO ,  Hanying Feng ,  Jun Ye

    IPC分类号： G03F1/00

    CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70483 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70991 ,  G06F17/5068

    摘要： The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.