发明申请
US20130256757A1 SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMITTER CONTACT
审中-公开
具有宽带带隙发射体接触的SOI侧向双极晶体管
- 专利标题： SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMITTER CONTACT
- 专利标题（中）： 具有宽带带隙发射体接触的SOI侧向双极晶体管
-
申请号： US13433537申请日： 2012-03-29
-
公开(公告)号： US20130256757A1公开(公告)日： 2013-10-03
- 发明人: Jin Cai , Kevin K. Chan , Christopher P. D'Emic , Tak H. Ning , Dae-Gyu Park
- 申请人： Jin Cai , Kevin K. Chan , Christopher P. D'Emic , Tak H. Ning , Dae-Gyu Park
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/737
- IPC分类号： H01L29/737 ; H01L21/331
摘要：
A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively.
信息查询
IPC分类:
