摘要:
A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively.
摘要:
A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively.
摘要:
A germanium lateral bipolar junction transistor (BJT) is formed employing a germanium-on-insulator (GOI) substrate. A silicon passivation layer is deposited on the top surface of a germanium layer in the GOI substrate. Shallow trench isolation structures, an extrinsic base region structure, and a base spacer are subsequently formed. A germanium emitter region, a germanium base region, and a germanium collector region are formed within the germanium layer by ion implantation. A silicon emitter region, a silicon base region, and a silicon collector region are formed in the silicon passivation layer. After optional formation of an emitter contact region and a collector contact region, metal semiconductor alloy regions can be formed. A wide gap contact for minority carriers is provided between the silicon base region and the germanium base region and between the silicon emitter region and the germanium emitter region.
摘要:
A germanium lateral bipolar junction transistor (BJT) is formed employing a germanium-on-insulator (GOI) substrate. A silicon passivation layer is deposited on the top surface of a germanium layer in the GOI substrate. Shallow trench isolation structures, an extrinsic base region structure, and a base spacer are subsequently formed. A germanium emitter region, a germanium base region, and a germanium collector region are formed within the germanium layer by ion implantation. A silicon emitter region, a silicon base region, and a silicon collector region are formed in the silicon passivation layer. After optional formation of an emitter contact region and a collector contact region, metal semiconductor alloy regions can be formed. A wide gap contact for minority carriers is provided between the silicon base region and the germanium base region and between the silicon emitter region and the germanium emitter region.
摘要:
A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively.
摘要:
A horizontal heterojunction bipolar transistor (HBT) includes doped single crystalline Ge having a doping of the first conductivity type as the base having an energy bandgap of about 0.66 eV, and doped polysilicon having a doping of a second conductivity type as a wide-gap-emitter having an energy bandgap of about 1.12 eV. In one embodiment, doped polysilicon having a doping of the second conductivity type is employed as the collector. In other embodiments, a single crystalline Ge having a doping of the second conductivity type is employed as the collector. In such embodiments, because the base and the collector include the same semiconductor material, i.e., Ge, having the same lattice constant, there is no lattice mismatch issue between the collector and the base. In both embodiments, because the emitter is polycrystalline and the base is single crystalline, there is no lattice mismatch issue between the base and the emitter.
摘要:
A horizontal heterojunction bipolar transistor (HBT) includes doped single crystalline Ge having a doping of the first conductivity type as the base having an energy bandgap of about 0.66 eV, and doped polysilicon having a doping of a second conductivity type as a wide-gap-emitter having an energy bandgap of about 1.12 eV. In one embodiment, doped polysilicon having a doping of the second conductivity type is employed as the collector. In other embodiments, a single crystalline Ge having a doping of the second conductivity type is employed as the collector. In such embodiments, because the base and the collector include the same semiconductor material, i.e., Ge, having the same lattice constant, there is no lattice mismatch issue between the collector and the base. In both embodiments, because the emitter is polycrystalline and the base is single crystalline, there is no lattice mismatch issue between the base and the emitter.
摘要:
A vertical heterojunction bipolar transistor (HBT) includes doped polysilicon having a doping of a first conductivity type as a wide-gap-emitter with an energy bandgap of about 1.12 eV and doped single crystalline Ge having a doping of the second conductivity type as the base having the energy bandgap of about 0.66 eV. Doped single crystalline Ge having of doping of the first conductivity type is employed as the collector. Because the base and the collector include the same semiconductor material, i.e., Ge, having the same lattice constant, there is no lattice mismatch issue between the collector and the base. Further, because the emitter is polycrystalline and the base is single crystalline, there is no lattice mismatch issue between the base and the emitter.
摘要:
A vertical heterojunction bipolar transistor (HBT) includes doped polysilicon having a doping of a first conductivity type as a wide-gap-emitter with an energy bandgap of about 1.12 eV and doped single crystalline Ge having a doping of the second conductivity type as the base having the energy bandgap of about 0.66 eV. Doped single crystalline Ge having of doping of the first conductivity type is employed as the collector. Because the base and the collector include the same semiconductor material, i.e., Ge, having the same lattice constant, there is no lattice mismatch issue between the collector and the base. Further, because the emitter is polycrystalline and the base is single crystalline, there is no lattice mismatch issue between the base and the emitter.
摘要:
A lateral heterojunction bipolar transistor (HBT) is formed on a semiconductor-on-insulator substrate. The HBT includes a base including a doped silicon-germanium alloy base region, an emitter including doped silicon and laterally contacting the base, and a collector including doped silicon and laterally contacting the base. Because the collector current is channeled through the doped silicon-germanium base region, the HBT can accommodate a greater current density than a comparable bipolar transistor employing a silicon channel. The base may also include an upper silicon base region and/or a lower silicon base region. In this case, the collector current is concentrated in the doped silicon-germanium base region, thereby minimizing noise introduced to carrier scattering at the periphery of the base. Further, parasitic capacitance is minimized because the emitter-base junction area is the same as the collector-base junction area.