- 专利标题： FLASH MEMORY USING FRINGING EFFECTS AND ELECTROSTATIC SHIELDING
- 专利标题（中）： 闪光效应和静电屏蔽
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申请号： US13992298申请日： 2011-12-05
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公开(公告)号： US20130256782A1公开(公告)日： 2013-10-03
- 发明人: Tae Whan Kim , Joo Hyung You , Sung Ho Kim
- 申请人： Tae Whan Kim , Joo Hyung You , Sung Ho Kim
- 申请人地址： KR Seoul
- 专利权人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
- 当前专利权人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
- 当前专利权人地址： KR Seoul
- 优先权： KR10-2010-0125142 20101208
- 国际申请： PCT/KR11/09364 WO 20111205
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extending to a tunneling insulation layer. Thus, coupling between the adjacent gate stacks is minimized by electrostatic shielding.
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