发明申请
US20130256784A1 MOSFETs with Channels on Nothing and Methods for Forming the Same
有权
没有通道的MOSFET和其形成方法
- 专利标题： MOSFETs with Channels on Nothing and Methods for Forming the Same
- 专利标题（中）： 没有通道的MOSFET和其形成方法
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申请号： US13436322申请日： 2012-03-30
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公开(公告)号： US20130256784A1公开(公告)日： 2013-10-03
- 发明人: Georgios Vellianitis , Mark Van Dal , Blandine Duriez
- 申请人： Georgios Vellianitis , Mark Van Dal , Blandine Duriez
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A device includes a semiconductor substrate, and a channel region of a transistor over the semiconductor substrate. The channel region includes a semiconductor material. An air gap is disposed under and aligned to the channel region, with a bottom surface of the channel region exposed to the air gap. Insulation regions are disposed on opposite sides of the air gap, wherein a bottom surface of the channel region is higher than top surfaces of the insulation regions. A gate dielectric of the transistor is disposed on a top surface and sidewalls of the channel region. A gate electrode of the transistor is over the gate dielectric.
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