发明申请
- 专利标题： POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- 专利标题（中）： 功率半导体器件及其制造方法
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申请号： US13431063申请日： 2012-03-27
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公开(公告)号： US20130256789A1公开(公告)日： 2013-10-03
- 发明人: SUNG-NIEN TANG , HSIU-WEN HSU
- 申请人： SUNG-NIEN TANG , HSIU-WEN HSU
- 申请人地址： TW NEW TAIPEI CITY
- 专利权人： SUPER GROUP SEMICONDUCTOR CO., LTD.
- 当前专利权人： SUPER GROUP SEMICONDUCTOR CO., LTD.
- 当前专利权人地址： TW NEW TAIPEI CITY
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/04
摘要：
A fabrication method of a power semiconductor device is provided. Firstly, a plurality of trenched gate structures is formed in the base. Then, a body mask is used for forming a pattern layer on the base. The pattern layer has at least a first open and a second open for forming at least a body region and a heavily doped region in the base respectively. Then, a shielding structure is formed on the base to fill the second open and line at least a sidewall of the first open. Next, a plurality of source doped regions is formed in the body region by using the pattern layer and the shielding structure as the mask. Then, an interlayer dielectric layer is formed on the base and a plurality of source contact windows is formed therein to expose the source doped regions.
公开/授权文献
- US08716787B2 Power semiconductor device and fabrication method thereof 公开/授权日：2014-05-06
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