发明申请
- 专利标题： PHOTOSENSITIVE MATERIAL AND METHOD OF PHOTOLITHOGRAPHY
- 专利标题（中）： 感光材料和光刻方法
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申请号： US13437674申请日： 2012-04-02
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公开(公告)号： US20130260311A1公开(公告)日： 2013-10-03
- 发明人: Ching-Yu Chang
- 申请人： Ching-Yu Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd. ("TSMC")
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd. ("TSMC")
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/004
摘要：
Methods and materials directed to solubility of photosensitive material in negative tone developer are described. The photosensitive material may include greater than 50% acid labile groups as branches to a polymer chain. In another embodiment, a photosensitive material, after exposure or irradiation, is treated. Exemplary treatments include applying a base to the photosensitive material.
公开/授权文献
- US09261786B2 Photosensitive material and method of photolithography 公开/授权日：2016-02-16
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