Invention Application
- Patent Title: STABLE SURFACE WAVE PLASMA SOURCE
- Patent Title (中): 稳定的表面波等离子体源
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Application No.: US13830090Application Date: 2013-03-14
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Publication No.: US20130264938A1Publication Date: 2013-10-10
- Inventor: Lee Chen , Jianping Zhao , Ronald V. Bravenec , Merritt Funk
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Main IPC: H05H1/46
- IPC: H05H1/46

Abstract:
A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.
Public/Granted literature
- US08669705B2 Stable surface wave plasma source Public/Granted day:2014-03-11
Information query
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