发明申请
US20130270510A1 NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
有权
非易失性半导体存储器元件，非易失性半导体存储器件及其制造非易失性半导体存储器件的方法
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 非易失性半导体存储器元件，非易失性半导体存储器件及其制造非易失性半导体存储器件的方法
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申请号： US13996203申请日： 2012-06-18
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公开(公告)号： US20130270510A1公开(公告)日： 2013-10-17
- 发明人: Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
- 申请人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
- 优先权： JP2011-142372 20110627
- 国际申请： PCT/JP2012/003958 WO 20120618
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00
摘要：
A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first semiconductor layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second semiconductor layer which covers side surfaces of the first current steering element electrode, the first semiconductor layer, and the second current steering element electrode.
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