发明申请
- 专利标题： HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 高压器件及其制造方法
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申请号： US13445151申请日： 2012-04-12
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公开(公告)号： US20130270634A1公开(公告)日： 2013-10-17
- 发明人: Tsung-Yi Huang , Chien-Wei Chiu
- 申请人： Tsung-Yi Huang , Chien-Wei Chiu
- 专利权人： Richtek Technology Corporation
- 当前专利权人： Richtek Technology Corporation
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a first conductive type substrate. A low voltage device is also formed in the substrate. The high voltage device includes a drift region, a gate, a source, a drain, and a mitigation region. The mitigation region has a second conductive type, and is formed in the drift region between the gate and drain. The mitigation region is formed by a process step which also forms a lightly doped drain (LDD) region in the low voltage device.
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