发明申请
- 专利标题: Thin Film Transistor and Display Apparatus Having the Same
- 专利标题(中): 薄膜晶体管和具有相同的显示装置
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申请号: US13782823申请日: 2013-03-01
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公开(公告)号: US20130271687A1公开(公告)日: 2013-10-17
- 发明人: Jihun Lim , Byung Du Ahn , Gun Hee Kim , Junhyun Park , Jehun Lee , Jaewoo Park , Dae Hwan Kim , Hyunkwang Jung , Jaehyeong Kim
- 申请人: KOOMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION , SAMSUNG DISPLAY CO., LTD.
- 申请人地址: KR Seoul KR Yongin-City
- 专利权人: KOOKMIN UNIVERSITY ACADEMY COOPERATION FOUNDATION,SAMSUNG DISPLAY CO., LTD.
- 当前专利权人: KOOKMIN UNIVERSITY ACADEMY COOPERATION FOUNDATION,SAMSUNG DISPLAY CO., LTD.
- 当前专利权人地址: KR Seoul KR Yongin-City
- 优先权: KR10-2012-0039237 20120416
- 主分类号: G02F1/1368
- IPC分类号: G02F1/1368 ; H01L29/786
摘要:
A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.
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