发明申请
- 专利标题： VAPOR DEPOSITION DEVICE AND VAPOR DEPOSITION METHOD
- 专利标题（中）： 蒸气沉积装置和蒸气沉积方法
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申请号： US13977645申请日： 2011-12-28
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公开(公告)号： US20130273746A1公开(公告)日： 2013-10-17
- 发明人: Shinichi Kawato , Nobuhiro Hayashi , Tohru Sonoda , Satoshi Inoue
- 申请人： Shinichi Kawato , Nobuhiro Hayashi , Tohru Sonoda , Satoshi Inoue
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 优先权： JP2011-002042 20110107
- 国际申请： PCT/JP2011/080354 WO 20111228
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/67
摘要：
A vapor deposition device (50) includes a mask (60) having periodic patterns, and only a region of the mask (60) where a one-period pattern is formed is exposed. A length of the mask base material along a direction perpendicular to a long-side direction of the mask base material is shorter than a length of a film formation substrate (200) along a direction of scanning of the film formation substrate (200). The mask (60) is provided so that the long-side direction of the mask base material is perpendicular to the direction of scanning and that the exposed region is allowed to move in a direction perpendicular to the direction of scanning by rotation of a wind-off roll (91) and a wind-up roll (92).
公开/授权文献
- US08628620B2 Vapor deposition device and vapor deposition method 公开/授权日：2014-01-14