A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.