发明申请
- 专利标题: DEPOSITION METHOD
- 专利标题(中): 沉积方法
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申请号: US13993266申请日: 2010-12-15
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公开(公告)号: US20130280414A1公开(公告)日: 2013-10-24
- 发明人: Eiji Fuchita , Eiji Tokizaki , Eiichi Ozawa
- 申请人: Eiji Fuchita , Eiji Tokizaki , Eiichi Ozawa
- 申请人地址: JP CHIBA
- 专利权人: FUCHITA NANOTECHNOLOGY LTD.
- 当前专利权人: FUCHITA NANOTECHNOLOGY LTD.
- 当前专利权人地址: JP CHIBA
- 国际申请: PCT/JP2010/007272 WO 20101215
- 主分类号: B05B7/14
- IPC分类号: B05B7/14
摘要:
[Object] To provide a deposition method that enables fine particles having a relatively large particle diameter (at least larger than 0.5 μm diameter) to be more stably deposited on a substrate by using a simple configuration.[Solving Means] In the deposition method, fine particles P whose surface is at least insulative are placed in an airtight container 2, and a carrier gas is introduced into the container, thereby triboelectrically charging the fine particles and generating an aerosol A of the fine particles. The fine particles in question are charged by friction with the inner surface of a transfer tubing 6 connected to the container, and the aerosol is conveyed via such tubing to a deposition chamber 3 which is maintained at a pressure lower than that in the airtight container. The charged fine particles are deposited on a substrate S placed in the deposition chamber.
公开/授权文献
- US08877297B2 Deposition method 公开/授权日:2014-11-04
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