发明申请
US20130280896A1 APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD THEREFOR
审中-公开
用于生产多晶硅的装置及其方法
- 专利标题: APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD THEREFOR
- 专利标题(中): 用于生产多晶硅的装置及其方法
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申请号: US13824383申请日: 2011-09-21
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公开(公告)号: US20130280896A1公开(公告)日: 2013-10-24
- 发明人: Shuichi Ohkubo , Masatsugu Yamaguchi
- 申请人: Shuichi Ohkubo , Masatsugu Yamaguchi
- 申请人地址: JP TOKYO JP KANAGAWA JP TOKYO
- 专利权人: JNC CORPORATION,TOHO TITANIUM CO., LTD.,JX NIPPON MINING & METALS CORPORATION
- 当前专利权人: JNC CORPORATION,TOHO TITANIUM CO., LTD.,JX NIPPON MINING & METALS CORPORATION
- 当前专利权人地址: JP TOKYO JP KANAGAWA JP TOKYO
- 优先权: JP2010-221264 20100930
- 国际申请: PCT/JP11/71429 WO 20110921
- 主分类号: H01L21/67
- IPC分类号: H01L21/67 ; H01L21/02
摘要:
To provide an apparatus for producing polycrystalline silicon and a method therefor to allow improvement in efficiency of polycrystalline silicon production by minimizing reactor downtime and to allow polycrystalline silicon production at a relatively low cost and in a large amount in a zinc reduction process for recovering formed silicon in a solid state. In a silicon producing apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, vertical reactor 1 has reactor upper body 2 and reactor lower body 3 that can be vertically detached, and reactor lower body 3 is movable in up-and-down and left-right directions.
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