A channel region of a finFET has fins having apexes in a first direction parallel to a surface of a substrate, each fin extending downwardly from the apex, with a gate overlying the apexes and between adjacent fins. A semiconductor stressor region extends in at least the first direction away from the fins to apply a stress to the channel region. Source and drain regions of the finFET can be separated from one another by the channel region, with the source and/or drain at least partly in the semiconductor stressor region. The stressor region includes a first semiconductor region and a second semiconductor region overlying and extending from the first semiconductor region. The second semiconductor region can be more heavily doped than the first semiconductor region, and the first and second semiconductor regions can have opposite conductivity types where at least a portion of the second semiconductor region meets the first semiconductor region.