发明申请
US20130285184A1 WAVEGUIDE PHOTODETECTOR AND FORMING METHOD THEREOF 审中-公开
波导光电转换器及其形成方法

  • 专利标题: WAVEGUIDE PHOTODETECTOR AND FORMING METHOD THEREOF
  • 专利标题(中): 波导光电转换器及其形成方法
  • 申请号: US13996448
    申请日: 2011-12-22
  • 公开(公告)号: US20130285184A1
    公开(公告)日: 2013-10-31
  • 发明人: Bing Li
  • 申请人: Bing Li
  • 国际申请: PCT/CN11/84418 WO 20111222
  • 主分类号: H01L31/0232
  • IPC分类号: H01L31/0232 H01L31/18
WAVEGUIDE PHOTODETECTOR AND FORMING METHOD THEREOF
摘要:
Techniques are described for forming a waveguide photodetector. In one example, a method of forming a waveguide photodetector includes forming a waveguide on a substrate, e.g., silicon on insulator, depositing a first oxide coating over the waveguide and on the SOI substrate, creating a seed window through the first oxide coating to a bulk silicon layer of the SOI substrate, depositing a photodetector material into the seed window and on top of the first oxide coating over the waveguide, depositing a second oxide coating over the photodetector material and over the first oxide coating deposited over the waveguide and on the SOI substrate, and applying thermal energy to liquefy the photodetector material.
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