Invention Application
US20130291925A1 SOLAR CELL WAFER AND METHOD OF PRODUCING THE SAME 有权
太阳能电池槽及其制造方法

  • Patent Title: SOLAR CELL WAFER AND METHOD OF PRODUCING THE SAME
  • Patent Title (中): 太阳能电池槽及其制造方法
  • Application No.: US13261672
    Application Date: 2012-01-18
  • Publication No.: US20130291925A1
    Publication Date: 2013-11-07
  • Inventor: Shigeru Okuuchi
  • Applicant: Shigeru Okuuchi
  • Priority: JP2011-014496 20110126; JP2011-123295 20110601
  • International Application: PCT/JP2012/051482 WO 20120118
  • Main IPC: H01L31/052
  • IPC: H01L31/052 H01L31/18
SOLAR CELL WAFER AND METHOD OF PRODUCING THE SAME
Abstract:
A solar cell wafer having a porous layer on a surface of a semiconductor wafer typified by a silicon wafer, which can further reduce reflection loss of light at the surface. A solar cell wafer 100 of the present invention has a porous layer 11 having a pore diameter of 10 nm or more and 45 nm or less, on at least one surface 10A of a semiconductor wafer 10, and the layer thickness of the porous layer 11 is more than 50 nm and 450 nm or less.
Public/Granted literature
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/04 .用作光伏〔PV〕转换器件(制造中其测试入H01L21/66;制造之后其测试入H02S50/10)
H01L31/052 ..与光伏电池直接联合或结合的冷却装置,例如,用于直接与光伏电池结合的主动冷却或散热器的Peltier元件(与光伏模块结合的冷却装置入H02S 40/42)
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