发明申请
- 专利标题： VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 可变电阻存储器件及其制造方法
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申请号： US13619918申请日： 2012-09-14
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公开(公告)号： US20130299763A1公开(公告)日： 2013-11-14
- 发明人: Ji-Won MOON , Sung-Hoon LEE , Sook-Joo KIM
- 申请人： Ji-Won MOON , Sung-Hoon LEE , Sook-Joo KIM
- 优先权： KR10-2012-0050366 20120511
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A variable resistance memory device that includes a first electrode, a second electrode, a variable resistance layer interposed between the first electrode and a second electrode. A metal oxide electrode is interposed between the first electrode and the variable resistance layer, and the metal oxide electrode does not include a nitrogen constituent.