发明申请
- 专利标题： SCHOTTKY BARRIER DIODE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 肖特彼勒二极管及其制造方法
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申请号： US13466550申请日： 2012-05-08
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公开(公告)号： US20130299840A1公开(公告)日： 2013-11-14
- 发明人: Chieh-Hsiung Kuan , Ting-Wei Liao , Chien-Wei Chiu , Tsung-Yi Huang
- 申请人： Chieh-Hsiung Kuan , Ting-Wei Liao , Chien-Wei Chiu , Tsung-Yi Huang
- 专利权人： Richtek Technology Corporation
- 当前专利权人： Richtek Technology Corporation
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/28 ; H01L29/872
摘要：
The present invention discloses a Schottky barrier diode (SBD) and a manufacturing method thereof. The SBD includes: a semiconductor layer, which has multiple openings forming an opening array; and an anode, which has multiple conductive protrusions protruding into the multiple openings and forming a conductive array; wherein a Schottky contact is formed between the semiconductor layer and the anode.