发明申请
US20130299882A1 METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE METALLIZATION
有权
具有自对准源金属化的GAN垂直JFET的方法和系统
- 专利标题： METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE METALLIZATION
- 专利标题（中）： 具有自对准源金属化的GAN垂直JFET的方法和系统
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申请号： US13468332申请日： 2012-05-10
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公开(公告)号： US20130299882A1公开(公告)日： 2013-11-14
- 发明人: Donald R. Disney , Richard J. Brown , Hui Nie
- 申请人： Donald R. Disney , Richard J. Brown , Hui Nie
- 申请人地址： US CA San Jose
- 专利权人： AVOGY, INC.
- 当前专利权人： AVOGY, INC.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L21/20
摘要：
A semiconductor device includes a III-nitride substrate and a channel structure coupled to the III-nitride substrate. The channel structure comprises a first III-nitride epitaxial material and is characterized by one or more channel sidewalls. The semiconductor device also includes a source region coupled to the channel structure. The source region comprises a second III-nitride epitaxial material. The semiconductor device further includes a III-nitride gate structure coupled to the one or more channel sidewalls, a gate metal structure in electrical contact with the III-nitride gate structure, and a dielectric layer overlying at least a portion of the gate metal structure. A top surface of the dielectric layer is substantially co-planar with a top surface of the source region.
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