发明申请
US20130302985A1 METHOD OF REMOVING RESIDUE DURING SEMICONDUCTOR DEVICE FABRICATION
审中-公开
在半导体器件制造过程中移除残留物的方法
- 专利标题： METHOD OF REMOVING RESIDUE DURING SEMICONDUCTOR DEVICE FABRICATION
- 专利标题（中）： 在半导体器件制造过程中移除残留物的方法
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申请号： US13468894申请日： 2012-05-10
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公开(公告)号： US20130302985A1公开(公告)日： 2013-11-14
- 发明人: Chun-Chang Wu , Chun-Chang Chen , Chuan-Ling Wu , Wang-Pen Mo , Hung-Chang Hsieh
- 申请人： Chun-Chang Wu , Chun-Chang Chen , Chuan-Ling Wu , Wang-Pen Mo , Hung-Chang Hsieh
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method is described including forming a first photoresist feature and a second photoresist feature on a semiconductor substrate. A chemical material coating is formed on the semiconductor substrate. The chemical material coating interposes the first and second photoresist features. The semiconductor substrate is then rinsed; the rinsing removes the chemical material coating from the semiconductor substrate. The chemical material may mix with a residue disposed on the substrate between the first and second photoresist features. Removing the chemical material coating from the substrate may also remove the residue.