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公开(公告)号:US20130302985A1
公开(公告)日:2013-11-14
申请号:US13468894
申请日:2012-05-10
申请人: Chun-Chang Wu , Chun-Chang Chen , Chuan-Ling Wu , Wang-Pen Mo , Hung-Chang Hsieh
发明人: Chun-Chang Wu , Chun-Chang Chen , Chuan-Ling Wu , Wang-Pen Mo , Hung-Chang Hsieh
IPC分类号: H01L21/31
CPC分类号: H01L21/0206 , G03F7/091 , G03F7/40
摘要: A method is described including forming a first photoresist feature and a second photoresist feature on a semiconductor substrate. A chemical material coating is formed on the semiconductor substrate. The chemical material coating interposes the first and second photoresist features. The semiconductor substrate is then rinsed; the rinsing removes the chemical material coating from the semiconductor substrate. The chemical material may mix with a residue disposed on the substrate between the first and second photoresist features. Removing the chemical material coating from the substrate may also remove the residue.
摘要翻译: 描述了一种方法,包括在半导体衬底上形成第一光致抗蚀剂特征和第二光致抗蚀剂特征。 在半导体衬底上形成化学材料涂层。 化学材料涂层介于第一和第二光致抗蚀剂特征之间。 然后冲洗半导体衬底; 冲洗从半导体衬底去除化学材料涂层。 化学材料可以与设置在第一和第二光致抗蚀剂特征之间的衬底上的残留物混合。 从基材上除去化学材料涂层也可以除去残留物。
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公开(公告)号:US08883403B2
公开(公告)日:2014-11-11
申请号:US13616802
申请日:2012-09-14
IPC分类号: G03F7/26
CPC分类号: H01L21/0332
摘要: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate having two different topography areas adjacent to each other. A step-forming material (SFM) is deposited over the substrate. A patterned SFM is formed in the low topography area of the two areas. The formation of the patterned SFM provides a fairly planar surface across over the substrate.
摘要翻译: 公开了制造半导体集成电路(IC)的方法。 该方法包括提供具有彼此相邻的两个不同形貌区域的基底。 步骤形成材料(SFM)沉积在衬底上。 在两个区域的低地形区域中形成图案化的SFM。 图案化SFM的形成提供跨越衬底的相当平坦的表面。
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公开(公告)号:US20140080067A1
公开(公告)日:2014-03-20
申请号:US13616802
申请日:2012-09-14
IPC分类号: G03F7/20
CPC分类号: H01L21/0332
摘要: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate having two different topography areas adjacent to each other. A step-forming material (SFM) is deposited over the substrate. A patterned SFM is formed in the low topography area of the two areas. The formation of the patterned SFM provides a fairly planar surface across over the substrate.
摘要翻译: 公开了制造半导体集成电路(IC)的方法。 该方法包括提供具有彼此相邻的两个不同形貌区域的基底。 步骤形成材料(SFM)沉积在衬底上。 在两个区域的低地形区域中形成图案化的SFM。 图案化SFM的形成提供跨越衬底的相当平坦的表面。
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