发明申请
US20130306145A1 GLASS SUBSTRATE FOR CU-IN-GA-SE SOLAR CELL AND SOLAR CELL USING SAME
审中-公开
用于CU-IN-GA-SE太阳能电池和使用相同的太阳能电池的玻璃基板
- 专利标题： GLASS SUBSTRATE FOR CU-IN-GA-SE SOLAR CELL AND SOLAR CELL USING SAME
- 专利标题（中）： 用于CU-IN-GA-SE太阳能电池和使用相同的太阳能电池的玻璃基板
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申请号： US13952936申请日： 2013-07-29
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公开(公告)号： US20130306145A1公开(公告)日： 2013-11-21
- 发明人: Yu HANAWA , Yutaka Kuroiwa , Tetsuya Nakashima , Reo Usui , Takeshi Tomizawa , Tomomi Sekine
- 申请人： ASAHI GLASS COMPANY, LIMITED
- 申请人地址： JP Chiyoda-ku
- 专利权人： ASAHI GLASS COMPANY, LIMITED
- 当前专利权人： ASAHI GLASS COMPANY, LIMITED
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2011-016475 20110128
- 主分类号： H01L31/0392
- IPC分类号： H01L31/0392 ; C03C3/087 ; C03C3/093
摘要：
A glass substrate for a CIGS solar cell containing specific amounts of SiO2, Al2O3, B2O3, MgO, CaO, SrO, BaO, ZrO2, TiO2, Na2O and K2O, respectively. The glass substrate satisfies the specific requirements regarding MgO+CaO+SrO+BaO, Na2O+K2O, MgO/Al2O3, (2Na2O+K2O+SrO+BaO)/(Al2O3+ZrO2), Na2O/K2O, the relation of Al2O3 and MgO, and the relation of CaO and MgO, respectively. The glass substrate has a glass transition temperature of 640° C. or higher, an average coefficient of thermal expansion within a range of 50 to 350° C. of 70×10−7 to 90×10−7/° C., the temperature (T4) of 1,230° C. or lower, the temperature (T2) of 1,650° C. or lower, and a density of 2.7 g/cm3 or less. The glass substrate satisfies the relationship of T4−TL≧−30° C.
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