发明申请
- 专利标题： Semiconductor Device and Method for Manufacturing a Semiconductor Device
- 专利标题（中）： 半导体装置及半导体装置的制造方法
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申请号： US13476613申请日： 2012-05-21
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公开(公告)号： US20130307059A1公开(公告)日： 2013-11-21
- 发明人: Rolf Weis
- 申请人： Rolf Weis
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor device includes a first region of a first conductivity type and a body region of a second conductivity type, the first conductivity type being different from the second conductivity type. The body region is disposed on a side of a first surface of the semiconductor substrate. The semiconductor device further includes a plurality of trenches arranged in the first surface of the substrate, the trenches extending in a first direction having a component perpendicular to the first surface. Doped portions of the second conductivity type are adjacent to a lower portion of a sidewall of the trenches. The doped portions are electrically coupled to the body region via contact regions. The semiconductor device further includes a gate electrode disposed in an upper portion of the trenches.
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