发明申请
- 专利标题： METHOD AND STRUCTURE FOR FORMING FIN RESISTORS
- 专利标题（中）： 形成电阻率的方法和结构
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申请号： US13472605申请日： 2012-05-16
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公开(公告)号： US20130307076A1公开(公告)日： 2013-11-21
- 发明人: Kangguo Cheng , Thomas N. Adam , Ali Khakifirooz , Alexander Reznicek
- 申请人： Kangguo Cheng , Thomas N. Adam , Ali Khakifirooz , Alexander Reznicek
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/8234
摘要：
A fin resistor and method of fabrication are disclosed. The fin resistor comprises a plurality of fins arranged in a linear pattern with an alternating pattern of epitaxial regions. An anneal diffuses dopants from the epitaxial regions into the fins. Contacts are connected to endpoint epitaxial regions to allow the resistor to be connected to more complex integrated circuits.
公开/授权文献
- US08816436B2 Method and structure for forming fin resistors 公开/授权日：2014-08-26
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