- 专利标题: NON-VOLATILE MEMORY WITH EXTENDED ERROR CORRECTION PROTECTION
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申请号: US13947573申请日: 2013-07-22
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公开(公告)号: US20130311853A1公开(公告)日: 2013-11-21
- 发明人: Christopher Bueb
- 申请人: MICRON TECHNOLOGY, INC.
- 申请人地址: US ID Boise
- 专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人地址: US ID Boise
- 主分类号: G06F11/10
- IPC分类号: G06F11/10
摘要:
Embodiments of the present disclosure provide methods and apparatuses related to NVM devices with extended error correction protection. In some embodiments, a parity cache is used to store parity values of data values stored in a plurality of codewords of an NVM device. Other embodiments may be described and claimed.
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