发明申请
- 专利标题： BASE SUBSTRATE, GALLIUM NITRIDE CRYSTAL MULTI-LAYER SUBSTRATE AND PRODUCTION PROCESS THEREFOR
- 专利标题（中）： 基底，氮化钠晶体多层基板及其生产工艺
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申请号： US13983257申请日： 2012-03-02
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公开(公告)号： US20130313567A1公开(公告)日： 2013-11-28
- 发明人: Hiroshi Furuya , Masanobu Azuma , Kazuyuki Tadatomo , Narihito Okada
- 申请人： Hiroshi Furuya , Masanobu Azuma , Kazuyuki Tadatomo , Narihito Okada
- 申请人地址： JP Yamaguchi-shi, Yamaguchi JP Shunan-shi, Yamaguchi
- 专利权人： YAMAGUCHI UNIVERSITY,TOKUYAMA CORPORATION
- 当前专利权人： YAMAGUCHI UNIVERSITY,TOKUYAMA CORPORATION
- 当前专利权人地址： JP Yamaguchi-shi, Yamaguchi JP Shunan-shi, Yamaguchi
- 优先权： JP2011-049487 20110307
- 国际申请： PCT/JP2012/055407 WO 20120302
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/02
摘要：
A GaN crystal multi-layer substrate having surfaces with various crystal orientations formed on a sapphire base substrate, such as a substrate whose principal surface is a plane which is the a-plane, a plane which is the m-plane, or a plane having a low threading dislocation density and high crystal quality of a GaN crystal, and a production process therefor.The gallium nitride crystal multi-layer substrate comprises a sapphire base substrate and a gallium nitride crystal layer which is formed on the substrate by crystal growth, wherein the gallium nitride crystal layer is formed by lateral crystal growth from sidewalls which are c-planes of a plurality of grooves formed in the principal surface of the sapphire base substrate in such a manner that the surface thereof is parallel to the principal surface of the base substrate and constituted of a nonpolar a-plane or m-plane or a semipolar plane, and the dark-spot density of the gallium nitride crystal is less than 2×108/cm2, preferably not more than 1.85×108/cm2, particularly preferably not more than 1.4×108/cm2.