公开(公告)号：US20120009768A1

公开(公告)日：2012-01-12

申请号：US13256843

申请日：2010-02-09

申请人： Kazuyuki Tadatomo ,  Narihito Okada

发明人： Kazuyuki Tadatomo ,  Narihito Okada

IPC分类号： H01L21/20

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007

摘要： In a semiconductor device fabricated by growing a compound semiconductor layer on a sapphire substrate, a sapphire substrate enabling the semiconductor device to have a high light-extraction efficiency is provided.A plurality of projections 2, 2, . . . are provided at random on a surface of a sapphire substrate 1, and a GaN layer 10 is grown on this surface. Then, a multi-quantum well layer 12, a p-AlGaN layer 14, a p-GaN layer 16, and an ITO layer 18 are formed on the GaN layer 10, and two electrodes 21 and 22 are also formed. In this manner, a semiconductor light-emitting device is fabricated.

摘要翻译： 在通过在蓝宝石衬底上生长化合物半导体层制造的半导体器件中，提供了使半导体器件具有高光提取效率的蓝宝石衬底。 多个突起2，2，...。 。 。 在蓝宝石衬底1的表面上随机提供，并且在该表面上生长GaN层10。 然后，在GaN层10上形成多量子阱层12，p-AlGaN层14，p-GaN层16和ITO层18，并且还形成两个电极21和22。 以这种方式制造半导体发光器件。

公开(公告)号：US20130313567A1

公开(公告)日：2013-11-28

申请号：US13983257

申请日：2012-03-02

申请人： Hiroshi Furuya ,  Masanobu Azuma ,  Kazuyuki Tadatomo ,  Narihito Okada

发明人： Hiroshi Furuya ,  Masanobu Azuma ,  Kazuyuki Tadatomo ,  Narihito Okada

IPC分类号： H01L29/20 ,  H01L21/02

CPC分类号： H01L29/2003 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01S2304/12 ,  Y10T428/2457

摘要： A GaN crystal multi-layer substrate having surfaces with various crystal orientations formed on a sapphire base substrate, such as a substrate whose principal surface is a plane which is the a-plane, a plane which is the m-plane, or a plane having a low threading dislocation density and high crystal quality of a GaN crystal, and a production process therefor.The gallium nitride crystal multi-layer substrate comprises a sapphire base substrate and a gallium nitride crystal layer which is formed on the substrate by crystal growth, wherein the gallium nitride crystal layer is formed by lateral crystal growth from sidewalls which are c-planes of a plurality of grooves formed in the principal surface of the sapphire base substrate in such a manner that the surface thereof is parallel to the principal surface of the base substrate and constituted of a nonpolar a-plane or m-plane or a semipolar plane, and the dark-spot density of the gallium nitride crystal is less than 2×108/cm2, preferably not more than 1.85×108/cm2, particularly preferably not more than 1.4×108/cm2.

摘要翻译： 具有形成在蓝宝石基底基板上的具有各种晶体取向的表面的GaN晶体多层基板，例如其主表面为a面的<11-20平面的基板，1-100平面， 是具有低穿透位错密度和GaN晶体的高结晶质量的m面或<11-22>面及其制造方法。 氮化镓晶体多层基板包括蓝宝石基底基板和通过晶体生长在基板上形成的氮化镓晶体层，其中氮化镓晶体层是通过侧壁晶体生长而形成的，所述侧壁是侧壁的c面 多个槽形成在蓝宝石基底基板的主表面上，使得其表面平行于基底基板的主表面，并由非极性a面或m面或半极性<11-22 >面，氮化镓晶体的暗点密度小于2×10 8 / cm 2，优选为1.85×10 8 / cm 2以下，特别优选为1.4×10 8 / cm 2以下。

公开(公告)号：US08384111B2

公开(公告)日：2013-02-26

申请号：US13256843

申请日：2010-02-09

申请人： Kazuyuki Tadatomo ,  Narihito Okada

发明人： Kazuyuki Tadatomo ,  Narihito Okada

IPC分类号： H01L33/00

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007

摘要： In a semiconductor device fabricated by growing a compound semiconductor layer on a sapphire substrate, a sapphire substrate enabling the semiconductor device to have a high light-extraction efficiency is provided.A plurality of projections 2, 2, . . . are provided at random on a surface of a sapphire substrate 1, and a GaN layer 10 is grown on this surface. Then, a multi-quantum well layer 12, a p-AlGaN layer 14, a p-GaN layer 16, and an ITO layer 18 are formed on the GaN layer 10, and two electrodes 21 and 22 are also formed. In this manner, a semiconductor light-emitting device is fabricated.

摘要翻译： 在通过在蓝宝石衬底上生长化合物半导体层制造的半导体器件中，提供了使半导体器件具有高光提取效率的蓝宝石衬底。 多个突起2，2，...。 。 。 在蓝宝石衬底1的表面上随机提供，并且在该表面上生长GaN层10。 然后，在GaN层10上形成多量子阱层12，p-AlGaN层14，p-GaN层16和ITO层18，并且还形成两个电极21和22。 以这种方式制造半导体发光器件。