发明申请
- 专利标题： Silicon Controlled Rectifier With Stress-Enhanced Adjustable Trigger Voltage
- 专利标题（中）： 具有应力增强可调触发电压的硅控整流器
-
申请号： US13956795申请日： 2013-08-01
-
公开(公告)号： US20130313607A1公开(公告)日： 2013-11-28
- 发明人: Renata Camillo-Castillo , Erik M. Dahlstrom , Robert J. Gauthier, JR. , Ephrem G. Gebreselasie , Richard A. Phelps , Yun Shi , Andreas D. Stricker
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/73
- IPC分类号： H01L29/73
摘要：
Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon controlled rectifier (SCR) at a level sufficient to modulate a trigger current of the SCR. The device and design structures include a SCR with an anode, a cathode, a first region, and a second region of opposite conductivity type to the first region. The first and second regions of the SCR are disposed in a current-carrying path between the anode and cathode of the SCR. A layer is positioned on a top surface of a semiconductor substrate relative to the first region and configured to cause a mechanical stress in the first region of the SCR at a level sufficient to modulate a trigger current of the SCR.
公开/授权文献
信息查询
IPC分类:
