发明申请
- 专利标题： FORMING FACET-LESS EPITAXY WITH A CUT MASK
- 专利标题（中）： 用切割面膜形成面积小的外观
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申请号： US13478411申请日： 2012-05-23
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公开(公告)号： US20130313647A1公开(公告)日： 2013-11-28
- 发明人: Michael Vincent Aquilino , Byeong Yeol Kim , Ying Li , Carl John Radens
- 申请人： Michael Vincent Aquilino , Byeong Yeol Kim , Ying Li , Carl John Radens
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/088
摘要：
A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also deposited on a second region of the continuous active layer such that the first raised epitaxial layer is in close proximity to the second raised epitaxial layer. A mask may be used to etch a trench structure into the continuous active layer at both the first and the second raised epitaxial layer, whereby the etched trench structure is filled with isolation material for electrically isolating the first raised epitaxial layer from the second raised epitaxial layer.
公开/授权文献
- US08658486B2 Forming facet-less epitaxy with a cut mask 公开/授权日：2014-02-25
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