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    Forming facet-less epitaxy with a cut mask
    1.
    发明授权
    Forming facet-less epitaxy with a cut mask 有权
    用切割面罩形成小面外延

    公开(公告)号：US08658486B2

    公开(公告)日：2014-02-25

    申请号：US13478411

    申请日：2012-05-23

    申请人： Michael Vincent Aquilino ,  Byeong Yeol Kim ,  Ying Li ,  Carl John Radens

    发明人： Michael Vincent Aquilino ,  Byeong Yeol Kim ,  Ying Li ,  Carl John Radens

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336 ,  H01L21/8234

    CPC分类号： H01L21/823807 ,  H01L21/76897 ,  H01L21/823814 ,  H01L29/66636 ,  H01L29/78

    摘要： A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also deposited on a second region of the continuous active layer such that the first raised epitaxial layer is in close proximity to the second raised epitaxial layer. A mask may be used to etch a trench structure into the continuous active layer at both the first and the second raised epitaxial layer, whereby the etched trench structure is filled with isolation material for electrically isolating the first raised epitaxial layer from the second raised epitaxial layer.

    摘要翻译： 提供了在基板上形成半导体结构的方法。 该方法可以包括在衬底的区域上制备连续的有源层并且在连续有源层的第一区域上沉积第一凸起的外延层。 第二凸起外延层也沉积在连续有源层的第二区上，使得第一凸起外延层紧邻第二凸起外延层。 可以使用掩模将沟槽结构蚀刻到第一和第二凸起外延层两端的连续有源层，由此蚀刻沟槽结构填充有用于将第一凸起外延层与第二凸起外延层电隔离的隔离材料 。

    FORMING FACET-LESS EPITAXY WITH A CUT MASK
    2.
    发明申请
    FORMING FACET-LESS EPITAXY WITH A CUT MASK 有权
    用切割面膜形成面积小的外观

    公开(公告)号：US20130313647A1

    公开(公告)日：2013-11-28

    申请号：US13478411

    申请日：2012-05-23

    申请人： Michael Vincent Aquilino ,  Byeong Yeol Kim ,  Ying Li ,  Carl John Radens

    发明人： Michael Vincent Aquilino ,  Byeong Yeol Kim ,  Ying Li ,  Carl John Radens

    IPC分类号： H01L21/8234 ,  H01L27/088

    CPC分类号： H01L21/823807 ,  H01L21/76897 ,  H01L21/823814 ,  H01L29/66636 ,  H01L29/78

    摘要： A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also deposited on a second region of the continuous active layer such that the first raised epitaxial layer is in close proximity to the second raised epitaxial layer. A mask may be used to etch a trench structure into the continuous active layer at both the first and the second raised epitaxial layer, whereby the etched trench structure is filled with isolation material for electrically isolating the first raised epitaxial layer from the second raised epitaxial layer.

    摘要翻译： 提供了在基板上形成半导体结构的方法。 该方法可以包括在衬底的区域上制备连续的有源层并且在连续有源层的第一区域上沉积第一凸起的外延层。 第二凸起外延层也沉积在连续有源层的第二区上，使得第一凸起外延层紧邻第二凸起外延层。 可以使用掩模将沟槽结构蚀刻到第一和第二凸起外延层两端的连续有源层，由此蚀刻沟槽结构填充有用于将第一凸起外延层与第二凸起外延层电隔离的隔离材料 。