Invention Application
- Patent Title: INTEGRATED CIRCUIT WITH INTEGRATED DECOUPLING CAPACITORS
- Patent Title (中): 集成电路与集成的去耦电容器
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Application No.: US13953476Application Date: 2013-07-29
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Publication No.: US20130313679A1Publication Date: 2013-11-28
- Inventor: Scott Robert Summerfelt , John A. Rodriguez , Huang-Chun Wen , Steven Craig Bartling
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L27/06

Abstract:
Ferroelectric capacitor structures for integrated decoupling capacitors and the like. The ferroelectric capacitor structure includes two or more ferroelectric capacitors connected in series with one another between voltage nodes. The series connection of the ferroelectric capacitors reduces the applied voltage across each, enabling the use of rough ferroelectric dielectric material, such as PZT deposited by MOCVD. Matched construction of the series-connected capacitors, as well as uniform polarity of the applied voltage across each, is beneficial in reducing the maximum voltage across any one of the capacitors, reducing the vulnerability to dielectric breakdown.
Public/Granted literature
- US09070575B2 Integrated circuit with integrated decoupling capacitors Public/Granted day:2015-06-30
Information query
IPC分类: